View Generic Document: Characterization of Organic semiconductor thin films: In situ synchrotron x-ray scattering and ex situ atomic force microscopy
Citation:
Greer, Douglas (2009). Characterization of Organic semiconductor thin films: In situ synchrotron x-ray scattering and ex situ atomic force microscopy. Cornell Center for Materials Research.
Our group studies the growth of organic semiconductor thin films, to better understand the connection between thin film morphology, crystal structure, and electronic device
properties. Conventionally, thin films of organic semiconductors are deposited using thermal evaporation. However, the use of supersonic molecular beams to deposit thin films allows the incident
kinetic energy of the organic semiconductor to be tuned in the range of 4-16 eV. The organic semiconductor thin films are characterized using in situ real time synchrotron x-ray scattering, and ex
situ atomic force microscopy (AFM). My research experience this summer primarily consisted of analyzing x-ray data and studying the morphology of the thin films deposited on various dielectrics
(self-assembled monolayers, SAMs) of varying chain length using AFM.
Publisher
Cornell Center for Materials Research
Date
2009-08-15
Copyright Notice
Copyright 2009 CCMR. Materials from the CCMR website http://www.ccmr.cornell.edu/ may not be used without permission.
Copyright Agreement
on
Additional Notes
Support for the CCMR is provided through the NSF Grant DMR 0520404, part of the NSF MRSEC Program. Additional support is provided by Cornell University, the State of New York, and
by industrial sources. More information on the CCMR REU program can be found at http://www.ccmr.cornell.edu/education/reu/
Guest - May 24, 2013
View Generic Document: Characterization of Organic semiconductor thin films: In situ synchrotron x-ray scattering and ex situ atomic force microscopy 